K4B4G1646E-BCMA

Overview

The K4B4G1646E-BCMA is Samsung's 4Gb E-die DDR3 SDRAM, built exclusively in a x16 configuration and packaged in a 96-ball FBGA. It addresses 256M × 16 across 8 internal banks and runs a maximum data rate of 1866 Mbps per pin at a 933MHz clock, with CAS latency 13.

Because the device is x16, a single package covers a full 16-bit memory bus — the reason it remains a standard choice for cost-sensitive embedded designs that do not need the width of a x8 array. Scaling is straightforward: two devices form a 32-bit interface at 1GB, four devices form a 64-bit interface at 2GB.

Specification

Posted CAS with programmable Additive Latency (0, CL-1 or CL-2) Programmable CAS Write Latency; CWL = 9 at DDR3-1866 8-bit prefetch architecture; Burst Length 8, with BL4 available (tCCD = 4) On-die ZQ self-calibration through the ZQ pin (RZQ = 240 Ω) On-Die Termination (ODT) and asynchronous RESET Differential clock inputs (CK / CK#) and bidirectional differential data strobes (DQS / DQS#) RAS/CAS multiplexed address bus x16 devices disable the TDQS function via MR1 A11 = 0

Applications

Routers, switches and network gateways Industrial mainboards and control systems requiring long lifecycle supply Set-top boxes and smart TV platforms Single-board computers and compute modules Graphics cards and embedded 16-bit / 32-bit bus designs Ordering Guide — Read Before You Order

Part number	Voltage	Speed grade	CAS
K4B4G1646E-BCK0	1.5V	DDR3-1600	11-11-11
K4B4G1646E-BCMA	1.5V	DDR3-1866	13-13-13
K4B4G1646E-BCNB	1.5V	DDR3-2133	14-14-14
K4B4G1646E-BYMA	1.35V (DDR3L)	DDR3-1866	13-13-13